Integration of Si/SiGe HBT and Si-based RITD demonstrating controllable negative differential resistance for wireless applications
نویسندگان
چکیده
Si-based resonant interband tunnel diodes (RITD) were monolithically integrated with Si/SiGe heterojunction bipolar transistors (HBT) on silicon substrates effectively creating a 3-terminal negative differential resistance (NDR) device. We demonstrate that the room temperature NDR in the IC–VEC characteristics under common emitter configuration can be controlled by a third terminal which is the basis of the integrated circuit. The estimated NDR values from the DC I–V characteristics, assuming that the NDR is linear, can be varied from about 27.5 X to 180 X with respect to VCE in the range of 0.96 V–1.16 V. 2006 Elsevier Ltd. All rights reserved.
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